Project entitled“Investigations on Chalcogenide Photodetectors”
Qualification: Potential candidates should have M.E./M.Tech. in VLSI/ECE/Material Sci. Engg./Nanotechnology with 60% marks.
DESIRABLE QUALIFICATION: 1. Candidates with who have valid GATE/NET (JRF)/equivalent score are preferable. 2. Furthermore, the applicant should have sound Device simulation understanding/ practical knowledge of basic thin film fabrication steps/ thin film surface characterizations/ interaction of radiation with matter at nanoscale dimensions etc. 3. Experience of simulations with Device Simulator/Lumerical software is preferable.
Age Limit: Maximum 35 Years as on 01/07/2018.